17-01-2019
03-12-2018
| Sequential Read | 540 MB/s |
| Sequential Write | 480 MB/s |
| Random Read (8GB Span) | 41000 IOPS |
| Random Write (8GB Span) | 49000 IOPS |
| Latency - Read | 80 µs |
| Latency - Write | 85 µs |
| Power - Active | 140 mW |
| Power - Idle | 55 mW |
| Vibration - Operating | 2.17 GRMS (5-700 Hz) Max |
| Vibration - Non-Operating | 3.13 GRMS (5-700 Hz) Max |
| Shock (Operating and Non-Operating) | 1000 G (Max) at 0.5 msec |
| Operating Temperature | ? C - 70? C |
| Weight | < 10 grams |
| Mean Time Between Failures (MTBF) | 1,200,000 Hours |
| Uncorrectable Bit Error Rate (UBER) | <1 sector per 1016 bits read |
| 5 | |
| Components | Intel NAND Flash Memory Multi-Level Cell (MLC) Technology | |
| Capacity | 180 GB | |
| Form Factor | mSATA | |
| Interface | SATA - 6.0 Gb/s | |
| Lithography | 20 nm | |
| Advanced Technologies | ||
| Hardware Encryption | 256 bit | |
| End-to-End Data Protection | Yes | |
| Intel® Smart Response Technology | Yes | |
| Intel® Rapid Start Technology | Yes | |
